inchange semiconductor product specification silicon npn power transistors 2SD2125 description ? ? with to-3p(h)is package ? built-in damper diode ? high voltage ,high speed ? low saturation voltage applications ? horizontal output applications for color tv ?medium resolution display pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v ebo emitter-base voltage open collector 5 v i c collector current 6 a i cm collector current-peak 10 a i b base current 3 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2125 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =200ma , i c =0 5 v v cesat collector-emitter saturation voltage i c =5a ;i b =1a 3.0 5.0 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 | a h fe-1 dc current gain i c =1a ; v ce =5v 8 20 h fe-2 dc current gain i c =5a ; v ce =5v 5 f t transition frequency i c =0.1a ; v ce =10v 3 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 165 pf v f diode forward voltage i f =6a 2.0 v t f fall time i cp =5a ;i bl =1a;v cc =100v 0.5 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD2125 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
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